1,Chips can be divided into: thyristor (with gate and graphics) chip and rectifier (without gate and graphics) chip
2,Chip features: GE process standard through pressure reduction, with strong thermal fatigue resistance characteristics, chip aluminum layer thickness of more than 10 microns, double layer protection table.
3,In order to provide better service and give back to the majority of users, the technical department of our company has sorted out the correct use of chips for your reference:
1. The chip shall be stored in nitrogen or vacuum to prevent the voltage change caused by oxidation and humidity of molybdenum pieces;
2. Keep the surface of the chip clean, please we ar gloves or gloves, and do not touch the chip with bare hands;
3. Operate carefully in the process of use. Do not damage the edge surface of the chip and the aluminum layer in the pole area of the door, resulting in chip damage;
4. For pressure test or chip use, please note that the parallelism, flatness and pressure of the fixture meet the specified standards;Poor parallelism will result in uneven pressure and damage of chip by local forces;If the pressure is too large, the chip will be damaged. If the pressure is too small, the contact and heat dissipation will be affected.
5. The pressure block in contact with the cathode surface of the chip must be annealed;
| Electrical characteristics of KP chip | Chip outline parameter |
| Specification | VDRM/VRRM | IDRM/IRRM | IGT | VGT | VTM@ITM | dv/dt | F | Fusion Diameter | Thickness | Cathode Outer Diameter | Gate diameter | Amplification Diameter |
| V | mA | mA | V | V | A | V/μs | KN |
| Tj=125℃ | Tj=25℃ | Tj=25℃ | Tj=125℃ | ±5% | mm |
| KPΦ20 | 1600 | ≤12 | 20~100 | ≤2.5 | ≤1.5 | 300 | 1000 | 2.5 | 20-0.1 | Depending on the voltage level | Depending on the voltage level | 2 | 5.4 |
| KPΦ24 | 3000 | ≤16 | 30~100 | ≤2.5 | ≤1.6 | 390 | 1000 | 4.0 | 24-0.1 | 2 | 5.4 |
| KPΦ26 | 4000 | ≤30 | 30~100 | ≤2.5 | ≤2.3 | 480 | 1000 | 5.0 | 26-0.1 | 2 | 5.4 |
| KPΦ30 | 3500 | ≤30 | 30~120 | ≤2.5 | ≤2.3 | 600 | 1000 | 7.5 | 30-0.1 | 2.5 | 7 |
| KPΦ32 | 2200 | ≤20 | 30~100 | ≤2.5 | ≤1.6 | 750 | 1000 | 9.0 | 32-0.1 | 2.5 | 7 |
| KPΦ35 | 4000 | ≤30 | 30~120 | ≤2.5 | ≤2.3 | 900 | 1000 | 11.0 | 35-0.1 | 2.5 | 7 |
| KPΦ38 | 1600 | ≤30 | 30~100 | ≤2.5 | ≤1.5 | 1200 | 1000 | 14.0 | 38-0.1 | 2.5 | 7 |
| KPΦ40 | 4000 | ≤50 | 30~120 | ≤2.5 | ≤2.4 | 1500 | 1000 | 15.0 | 40-0.1 | 2.5 | 7 |
| KPΦ45 | 4000 | ≤60 | 30~120 | ≤2.5 | ≤2.5 | 1800 | 1000 | 17.0 | 45-0.1 | 3.6 | 9.8 |
| KPΦ50 | 4000 | ≤70 | 30~150 | ≤2.5 | ≤2.5 | 2400 | 1000 | 22.0 | 50-0.1 | 3.6 | 9.8 |
| KPΦ55 | 4000 | ≤80 | 40~150 | ≤2.5 | ≤2.5 | 3000 | 1000 | 26.0 | 55-0.1 | 4.8 | 13.2 |
| KPΦ60 | 4000 | ≤100 | 40~150 | ≤2.5 | ≤2.6 | 4000 | 1000 | 35.0 | 60-0.1 | 3.6 | 9.8 |
| KPΦ65 | 3000 | ≤100 | 40~150 | ≤2.5 | ≤2.0 | 4000 | 1000 | 40.0 | 65-0.1 | 4.8 | 13.2 |
| KPΦ70 | 3000 | ≤120 | 40~150 | ≤2.5 | ≤2.0 | 4000 | 1000 | 45.0 | 70-0.1 | 4.8 | 13.2 |
| KPΦ76.2 | 3000 | ≤150 | 40~150 | ≤2.5 | ≤2.0 | 4000 | 1000 | 55.0 | 76.2-0.1 | 4.8 | 13.2 |
| Electrical characteristics of KPL chip |
| Specification | VDRM/VRRM | IDRM/IRRM | IGT | VGT | VTM@ITM | dv/dt | F |
| V | mA | mA | V | V | A | V/μs | KN |
| Tj=125℃ | Tj=25℃ | Tj=25℃ | Tj=125℃ | ±5% |
| KPΦ24 | 1600 | ≤16 | 30~100 | ≤2.5 | ≤1.6 | 300 | 1000 | 4.0 |
| KPΦ30 | 1600 | ≤30 | 30~120 | ≤2.5 | ≤2.3 | 600 | 1000 | 7.5 |
| KPΦ35 | 1600 | ≤30 | 30~120 | ≤2.5 | ≤2.3 | 900 | 1000 | 11.0 |
| KPΦ40 | 1600 | ≤50 | 30~120 | ≤2.5 | ≤2.4 | 1500 | 1000 | 15.0 |
| Electrical characteristics of KS chip |
| Specification | VDRM | IDRM | IGT | VGT | VTM@ITM | F |
| V | mA | mA | V | V | A | KN |
| Tj=125℃ | Tj=25℃ | Tj=25℃ | ±5% |
| KSΦ30 | 1600 | ≤20 | 30~150 | ≤3.0 | ≤2.2 | 280 | 7.5 |
| KSΦ32 | 1600 | ≤22 | 30~150 | ≤3.0 | ≤2.2 | 420 | 9.0 |
| KSΦ36 | 1600 | ≤25 | 30~150 | ≤3.0 | ≤2.2 | 700 | 11.0 |
| KSΦ40 | 1600 | ≤30 | 30~150 | ≤3.0 | ≤2.2 | 850 | 15.0 |
| KSΦ45 | 1600 | ≤35 | 30~150 | ≤3.0 | ≤2.2 | 1130 | 20 |
| KSΦ50 | 1600 | ≤40 | 30~150 | ≤3.0 | ≤2.2 | 1400 | 22 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
| Electrical characteristics of KSL chip |
| Specification | VDRM | IDRM | IGT | VGT | VTM@ITM | F |
| V | mA | mA | V | V | A | KN |
| Tj=125℃ | Tj=25℃ | Tj=25℃ | ±5% |
| KSΦ17 | 1600 | ≤12 | 20~100 | ≤3.0 | ≤2.2 | 70 | 2 |
| KSΦ24 | 1600 | ≤16 | 30~100 | ≤3.0 | ≤2.2 | 140 | 4.0 |
| KSΦ30 | 1600 | ≤20 | 30~120 | ≤3.0 | ≤2.2 | 280 | 7.5 |
| Electrical characteristics of ZP chip | Chip outline parameter |
| Specification | VRRM | IRRM | VFM@IFM | F | Fusion Diameter | Thickness | Cathode Outer Diameter |
| V | mA | V | A | KN |
| Tj=150℃ | Tj=25℃ | ±5% | mm | mm | mm |
| ZP20 | 5000 | ≤10 | ≤1.7 | 300 | 4 | 20-0.1 | Depending on the voltage level | Depending on the voltage level |
| ZP24 | 5000 | ≤12 | ≤1.8 | 600 | 6 | 24-0.1 |
| ZP26 | 5000 | ≤15 | ≤1.8 | 600 | 7 | 26-0.1 |
| ZP30 | 6000 | ≤20 | ≤2.0 | 900 | 10 | 30-0.1 |
| ZP32 | 6000 | ≤20 | ≤2.0 | 1200 | 12 | 32-0.1 |
| ZP35 | 6000 | ≤25 | ≤2.0 | 1500 | 15 | 35-0.1 |
| ZP40 | 6000 | ≤30 | ≤1.8 | 1800 | 20 | 40-0.1 |
| ZP45 | 6000 | ≤35 | ≤1.7 | 2400 | 25 | 45-0.1 |
| ZP50 | 6000 | ≤40 | ≤2.0 | 3000 | 30 | 50-0.1 |
| ZP55 | 6000 | ≤45 | ≤2.0 | 3000 | 35 | 55-0.1 |
| ZP60 | 6000 | ≤50 | ≤2.0 | 4000 | 40 | 60-0.1 |
| ZP65 | 5000 | ≤60 | ≤2.0 | 4000 | 50 | 65-0.1 |
| ZP70 | 4000 | ≤70 | ≤2.0 | 4000 | 55 | 70-0.1 |
| ZP76.2 | 4000 | ≤80 | ≤2.0 | 4000 | 60 | 76.2-0.1 |
| ZP80 | 3000 | ≤80 | ≤1.7 | 4000 | 70 | 80-0.1 |
| ZP90 | 1600 | ≤80 | ≤1.7 | 4000 | 80 | 90-0.1 |
| ZP95 | 1600 | ≤80 | ≤1.7 | 4000 | 90 | 95-0.1 |
| Electrical characteristics of ZPL chip |
| Specification | VRRM | IRRM | VFM@IFM | F | Fusion Diameter |
| V | mA | V | A | KN |
| Tj=150℃ | Tj=25℃ | ±5% | mm |
| ZP24L | 1600 | ≤10 | ≤1.7 | 600 | 6 | 24-0.1 |
| ZP30L | 1600 | ≤12 | ≤1.7 | 900 | 10 | 30-0.1 |
| ZP35L | 1600 | ≤15 | ≤1.7 | 1200 | 15 | 35-0.1 |
| ZP40L | 1600 | ≤20 | ≤1.7 | 1500 | 20 | 40-0.1 |
| ZP45L | 3000 | ≤25 | ≤1.7 | 1800 | 25 | 45-0.1 |